BDX62A 查看數據表（PDF） - New Jersey Semiconductor
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BDX62A Datasheet PDF : 2 Pages
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, Dnc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Darlington Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BDX62/A/B/C
DESCRIPTION
• Collector Current -lc= -8A
• High DC Current Gain-hFE= 1000(Min)@ lc= -3A
• Complement to Type BDX63/A/B/C
APPLICATIONS
• Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
BDX62
-80
VGBO
Collector-Base
Voltage
BDX62A
-100
V
BDX62B
-120
BDX62C
-140
BDX62
-60
VCEO
Collector-Emitter
Voltage
BDX62A
-80
V
BDX62B
-100
BDX62C
-120
VEBO Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-8
A
ICM
Collector Current-Peak
-12
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25°C
Tj
Junction Temperature
Tstg
Storage Temperature Range
-0.15
A
90
W
200
°C
-65-200 °c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.94 "CM/
1 V*
-iTfff, . i . ,V.-. 1
P'
=*2
PIN
1.BASE
2.BUIITTER
3. COLLECT OR (CASE)
TO-3 package
I
~*tU-0 2 PL
— U-
-t t
GB
DIM
A
B
c
D
E
_s_
H
K
L
N
3
U
V
inin
MM MAX
3900
25.30 26.67
7.80 8.30
0.90 1 10
1.40 1.60
1092
546
11.40 13.50
1675 1705
19.40 19.62
4.00 420
30 .pp 3020
4.30 450
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
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