HCF4097M013TR 查看數據表（PDF） - STMicroelectronics
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HCF4097M013TR Datasheet PDF : 10 Pages
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HCF4097B
DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns)
Symbol
Parameter
SWITCH
tpd
Propagation Delay
Time (Signal Input
to Output)
VC RL
fI
(V) (KΩ) (KHz)
= VDD 200
Frequency
Response Channel
"ON" (Sine Wave
Input) at
= VDD 1
20 Log –V–O–– = -3dB
VI
Feedthrough (All
channels OFF) at
20 Log –V–O– =-40dB = VSS 1
VI
Frequency Signal VC(A)
Crosstalk at
=VDD
20 LogV–O–(–A)=-40dB VC(B)
1
VI(B)
=VSS
tW Sine Wave
Distortion (fIS =
1KHz sine wave)
5
10 10 1
15
CONTROL(Address or Inhibit)
tPLH, tPHL Propagation Delay
Time:Address or
Inhibit to Signal
1
OUT (Channel
Turning ON)
tPLH, tPHL Propagation Delay
Time:Address or
Inhibit to Signal
0.3
OUT (Channel
Turning OFF)
Address or Inhibit to
Signal Crosstalk
10**
(*) Typical temperature coefficient for all VDD value is 0.3 %/°C
(**) : Both Ends of Channel
(•) : Peak to Peak voltage symmetrical about (VDD - VSS) / 2
Test Condition
VI VSS VDD
(V) (V) (V)
5
0 10
15
5 (•) 0 10
5 (•) 0 10
5 (•) 0 10
2 (•)
5
3 (•) 0 10
5 (•)
15
5
10
0
15
5
10
0
15
0 10
VO at Common
Out/In
VO at Any Chan-
nel
VO at Common
Out/In
VO at Any Chan-
nel
Between Any two
(A and B)
Channels
Between Sec-
tions (A and B)
Measured on
Common
Between Sec-
tions (A and B)
Measured on any
Channel
Value*
Typ. Max.
30 60
15 30
11 20
20
60
12
8
1
10
18
0.3
0.2
0.12
325 650
135 270
95 190
220 440
90 180
65 130
75
Unit
ns
ns
MHz
MHz
%
ns
ns
mV
peak
6/10
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