DGS10-022A(2001) 查看數據表（PDF） - IXYS CORPORATION
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DGS10-022A Datasheet PDF : 2 Pages
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DGS 10-022A DGSK 20-022A
DGS 10-025A DGSK 20-025A
20
10
A
IF
1
200
pF
100
CJ
0.1
TVJ =
125°C
25°C
0.01
0.0 0.5 1.0 1.5 V 2.0
VF
Fig. 1 typ. forward characteristics
10
0.1
TVJ = 125°C
1
10 100 V 1000
VR
Fig. 2 typ. junction capacity
versus blocking voltage
10
K/W
1
ZthJC
0.1
Single Pulse
Outline (center pin only for DGSK types)
0.01
0.00001
0.0001
0.001
0.01
0.1
Fig. 3 typ. thermal impedance junction to case
DGS10-015/018BS
1 s 10
t
Note:
explanatory comparison of the basic operational behaviour of rectifier diodes and Gallium
Arsenide Schottky diodes:
conduction
forward characteristics
turn off characteristics
turn on characteristics
Rectifier Diode
by majority + minority carriers
VF (IF)
extraction of excess carriers
causes temperature dependant
reverse recovery (trr, IRM, Qrr)
delayed saturation leads to VFR
GaAs Schottky Diode
by majority carriers only
VF (IF), see Fig. 1
reverse current charges
junction capacity CJ, see Fig. 2;
not temperature dependant
no turn on overvoltage peak
Dim. Millimeter
Min. Max.
A 12.70 13.97
B 14.73 16.00
C 9.91 10.66
D 3.54 4.08
E 5.85 6.85
F 2.54 3.18
G 1.15 1.65
H 2.79 5.84
J 0.64 1.01
K 2.54 BSC
M 4.32 4.82
N 1.14 1.39
Q 0.38 0.56
R 2.29 2.79
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.015 0.022
0.090 0.110
© 2001 IXYS All rights reserved
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