SI4542DY 查看數據表（PDF） - Vishay Semiconductors
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SI4542DY Datasheet PDF : 7 Pages
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Si4542DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
40
0.20
TJ = 150 °C
10
TJ = 25 °C
0.16
0.12
0.08
ID = 6.1 A
0.04
1
0
0.3
0.6
0.9
1.2
1.5
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.8
0.6
ID = 250 µA
0.4
0.2
0.0
- 0.2
- 0.4
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
2
1
Duty Cycle = 0.5
0.00
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
25
20
15
10
5
0
0.01
0.10
1.00
Time (s)
Single Pulse Power
10.00
0.2
0.1
0.1
0.05
0.02
0.01
10- 4
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 62.5 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
30
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70666.
www.vishay.com
6
Document Number: 70666
S09-0868-Rev. G, 18-May-09
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