MSC80186 查看數據表（PDF） - STMicroelectronics
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MSC80186 Datasheet PDF : 6 Pages
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MSC80186
RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE LINEAR APPLICATIONS
. EMITTER BALLASTED
. CLASS A LINEAR OPERATION
. COMMON EMITTER
. VSWR CAPABILITY 15:1 @ RATED
CONDITIONS
. ft 3.2 GHz TYPICAL
. NOISE FIGURE 12.5 dB @ 2 GHz
. POUT = 30.0 dBm MIN.
.230 4L STUD (S027)
hermetically sealed
ORDER CODE
MSC80186
BRANDING
80186
PIN CONNECTION
DESCRIPTION
The MSC80185 is a hermetically sealed NPN
power transistor featuring a unique matrix structure.
This device is specifically designed for Class A
linear applications to provide high gain and high
output power at the 1.0 dB compression point.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
PDISS
IC
VCE
TJ
TSTG
Parameter
Power Dissipation (see Safe Area)
Device Bias Current
Collector-Emitter Bias Voltage*
Junction Temperature
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
October 1992
1. Collector
2. Emitter
3. Base
4. Emitter
Value
Unit
—
W
500
mA
20
V
200
°C
− 65 to +200
°C
17
°C/W
1/6
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