MSC81118 查看數據表（PDF） - STMicroelectronics

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MSC81118

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

STMicroelectronics 

MSC81118

RF & MICROWAVE TRANSISTORS

GENERAL PURPOSE AMPLIFIER APPLICATIONS

. EMITTER BALLASTED

. VSWR CAPABILITY ∞:1 @ RATED

CONDITIONS

. HERMETIC STRIPAC® PACKAGE

. POUT = 2.0 W MIN. WITH 10 dB GAIN @

1.0 GHz

.250 2LFL (S010)

hermetically sealed

ORDER CODE

MSC81118

BRAN DI NG

81118

PIN CONNECTION

DESCRIPTION

The MSC81118 is a common base hermetically

sealed silicon NPN microwave transistor utilizing

a fishbone, emitter ballasted geometry with a re-

fractory/gold metallization system. This device is

capable of withstanding an infinite load VSWR at

any phase angle under rated conditions.

The MSC81118 was designed for Class C amplifier

applications in the 0.4 - 1.2 GHz frequency range.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symb ol

PDISS

IC

VCC

TJ

TSTG

Parameter

Power Dissipation* (TC ≤ 75°C)

Device Current*

Collector-Supply Voltage*

Junction Temperature

Storage Temperature

THERMAL DATA

RTH(j-c) Junction-Case Thermal Resistance*

*Applies only to rated RF amplifier operation

October 1992

1. Collector

2. Base

3. Emitter

4. Base

Value

Unit

6.25

W

200

mA

35

V

200

°C

− 65 to +200

°C

20

°C/W

1/5

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