EP10LA03 查看數據表（PDF） - Nihon Inter Electronics

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EP10LA03

Schottky Barrier Diode

Nihon Inter Electronics 

S B D T y p e : EP10LA03

FEATURES

* JEDEC SOD-123 Package

* Very Low profile 1.1mm Max

* Extremely Low Forward Voltage Drop

* Low Power Loss,High Efficiency

* High Surge Capability

* Low Thermal Resistance

* Packaged in 8mm Tape and Reel

OUTLINE DRAWING

Maximum Ratings

Approx Net Weight:0.011g

Rating

Symbol

EP10LA03

Repetitive Peak Reverse Voltage

Direct Forward Current

Average Rectified Output Current

Surge Forward Current

Operating JunctionTemperature Range

Storage Temperature Range

VRRM

Idc

IO

IFSM

Tjw

Tstg

30

1.0 Tl=100°C *

1.0 Ta=30°C

Direct Current

0.8 Tl=98°C

Rectangular

0.8 Ta=25°C

Current

12

50Hz Half Sine Wave,1cycle

Non-repetitive

-40 to +125

-40 to +125

Unit

V

A

A

A

°C

°C

Electrical • Thermal Characteristics

Characteristics

Symbol

Conditions

Min. Typ. Max.

Peak Reverse Current

IRM Tj= 25°C, VRM= VRRM

-

Peak Forward Voltage

VFM Tj= 25°C, IFM= 1.0A

-

Thermal Resistance

Rth(j-a) Junction to Ambient *

Rth(j-l) Junction to Lead

-

-

* Glass Epoxy Substrate Mounted (Soldering Lands=1x1mm,Both Sides)

(Tl: Lead Temperature)

-

2

- 0.39

- 270

- 70

Unit

mA

V

°C /W

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