2SK2211 查看數據表（PDF） - KEXIN Industrial

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2SK2211

N-Channel MOSFET

KEXIN Industrial 

SMD Type

N-Channel MOSFET

2SK2211

MOSFET

■ Features

● VDS (V) = 30V

● ID = 1A

● RDS(ON) ＜ 0.75Ω (VGS = 4V)

● RDS(ON) ＜ 0.6Ω (VGS = 10V)

G

D

S

1.70 0.1

0.42 0.1

0.46 0.1

1.Gate

2.Drain

3.Source

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Power Dissipation

Junction Temperature

Storage Temperature Range

Symbol

VDS

VGS

ID

IDM

PD

TJ

Tstg

Rating

30

±20

1

2

1

150

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Drain-Source Breakdown Voltage

VDSS ID=100μA, VGS=0V

Gate to Source voltage

VGSS IGS=100μA, VDS=0V

Zero Gate Voltage Drain Current

IDSS VDS=25V, VGS=0V

Gate-Body Leakage Current

IGSS VDS=0V, VGS=±15V

Gate threshold voltage

VGS(th) VDS=5V ID=1mA

Static Drain-Source On-Resistance

RDS(On)

VGS=4V, ID=0.5A

VGS=10V, ID=0.5A

Forward Transconductance

gFS

VDS=10V, ID=0.5 A

Input Capacitance

Ciss

Output Capacitance

Coss VGS=0V, VDS=10V, f=1MHz

Reverse Transfer Capacitance

Crss

Turn-On DelayTime

Turn-Off DelayTime

Turn-Off Fall Time

td(on)

td(off)

tf

VGS=10V, VDS=10V, ID=0.5A,

RL=10Ω

Unit

V

A

W

℃

Min Typ Max Unit

30

V

±20

10 uA

±10 uA

0.8

2

V

0.75

Ω

0.6

0.5

S

87

69

pF

23

12

60

ns

160

■ Marking

Marking

2M

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