2SK2734 查看數據表（PDF） - Hitachi -> Renesas Electronics

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2SK2734

Silicon N Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SK2734

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body to drain diode reverse drain current

Channel dissipation

VDSS

VGSS

ID

I *1

D(pulse)

I DR

Pch

Channel temperature

Tch

Storage temperature

Tstg

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

Ratings

Unit

30

V

±20

V

5

A

20

A

5

A

0.9

W

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown

voltage

V(BR)DSS

30

Gate to source breakdown

voltage

V(BR)GSS

±20

Zero gate voltege drain current IDSS

—

Gate to source leak current

I GSS

—

Gate to source cutoff voltage VGS(off)

1.0

Static drain to source on state RDS(on)

—

resistance

RDS(on)

—

Forward transfer admittance |yfs|

4

Input capacitance

Ciss

—

Output capacitance

Coss

—

Reverse transfer capacitance Crss

—

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body to drain diode forward

VDF

—

voltage

Body to drain diode reverse

t rr

—

recovery time

Note: 1. Pulse test

Typ Max Unit

—

—

V

—

—

V

—

10

µA

—

±10 µA

—

2.0

V

0.04 0.055 Ω

0.055 0.08 Ω

7

—

S

550 —

pF

380 —

pF

155 —

pF

14

—

ns

80

—

ns

80

—

ns

65

—

ns

1.0

—

V

40

—

ns

Test Conditions

ID = 10mA, VGS = 0

IG = ±100µA, VDS = 0

VDS = 30 V, VGS = 0

VGS = ±16V, VDS = 0

ID = 1mA, VDS = 10V

ID = 2.5A, VGS = 10V*1

ID = 2.5A, VGS = 4V*1

ID = 2.5A, VDS = 10V*1

VDS = 10V

VGS = 0

f = 1MHz

VGS = 10V, ID = 2.5A

RL = 4Ω

IF = 5A, VGS = 0

IF = 5A, VGS = 0

diF/ dt = 50A/µs

2

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