2SK1453 查看數據表（PDF） - Inchange Semiconductor
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2SK1453 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1453
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10V; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=10A
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=450V; VGS= 0
VSD
Diode Forward Voltage
IF=16A; VGS=0
MIN TYP MAX UNIT
450
V
2.0
3.0
V
0.24 0.30
Ω
±100 nA
1
mA
1.8
V
tr
Rise time
100
ns
ton
Turn-on time
tf
Fall time
toff
Turn-off time
140
ns
VGS=10V;ID=10A;RL=50Ω
150
ns
600
ns
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