2SA1170 查看數據表（PDF） - New Jersey Semiconductor
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2SA1170 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
2SA1170
ELECTRICAL CHARACTERISTICS
Tc-25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage lc= -50mA; IB= 0
-200
V
V(BR)EBO Emitter-Base Breakdown Voltage
lE=-1mA;lc=0
-6
V
VcE(sat)
Collector-Emitter Saturation Voltage
IC=-10A;IB=-1A
ICBO
Collector Cutoff Current
VCB= -200V; IE= 0
-2.5 V
-100 M A
IEBO
Emitter Cutoff Current
VEB= -6V; lc= 0
-100 u A
hFE
DC Current Gain
lc= -8A; VCE= -4V
20
COB
Output Capacitance
ft
Current-Gain—Bandwidth Product
|E= Q; VCB= -10V; f,est= 1 .0MHz
|E=1A;VCE=-12V
500
PF
20
MHz
Switching Times
tr
Rise Time
tstg
Storage Time
tf
Fall Time
|C=-10A, RL=4Q,
!BI= -Is2= -1A,VCc- -40V
0.6
us
0.9
us
0.2
us
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