2SA900 查看數據表（PDF） - Inchange Semiconductor

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2SA900

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SA900

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0

V(BR)CBO Collector-Base Breakdown Voltage

IC= -10μA; IE= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -10μA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -50mA

VBE(sat) Base-Emitter Saturation Voltage

IC= -0.5A; IB= -50mA

ICBO

Collector Cutoff Current

VCB= -10V; IE= 0

ICEO

Collector Cutoff Current

VCE= -18V; IB= 0

hFE-1

DC Current Gain

IC= -0.5A; VCE= -2V

hFE-2

DC Current Gain

IC= -1.5A ; VCE= -2V

fT

Current-Gain—Bandwidth Product

IC= -50mA; VCE= -6V

COB

Output Capacitance

IE=0; VCB= -6V, ftest= 1MHz

MIN TYP. MAX UNIT

-18

V

-20

V

-5

V

-0.5 V

-1.2 V

-1 μA

-10 μA

90

470

50

200

MHz

40

pF

‹ hFE-1 Classifications

Q

R

S

T

U

90-155 130-210 180-280 250-360 330-470

isc Website：www.iscsemi.cn

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