Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)C6O Collector-Emitter Breakdown Voltage lc=-10mA,lB=0
V(BR)CBO Collector-Base Breakdown Voltage
lc=-10u A,IE=0
V(BR)EBO Emitter-Base Breakdown Voltage
IE=-10|J A,lc=0
VcE(sat) Collector-Emitter Saturation Voltage lc= -0.5A; IB= -50mA
ICBO
Collector Cutoff Current
VGB= -100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; lc= 0
hFE
DC Current Gain
lc= -50mA; VCE= -4V
fr
Current-Gain—Bandwidth Product
lc= -50mA; VCE=-4V
2SA775
MIN TYP. MAX UNIT
-100
V
-100
V
-4
V
-1.0
V
-10 M A
-10
MA
35
200
30
MHz