A754 查看數據表（PDF） - New Jersey Semiconductor

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A754

Silicon PNP Power Transistor

New Jersey Semiconductor 

Silicon PNP Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-Base Breakdown Voltage

lc= -5mA; IE= 0

V(BR)CEO Collector-Emitter Breakdown Voltage lc= -50mA; RBE= °°

V(BR)EBO Emitter-Base Breakdown Voltage

!E= -5mA; lc= 0

VcE(sat) Collector-Emitter Saturation Voltage lc=-1.5A; IB=-0.15A

VBE(on) Collector-Emitter On Voltage

lc=-1A;VCE=-4V

ICBO

Collector Cutoff Current

VCB= -20V; IE= 0

hpE-1

DC Current Gain

lc= -1A; VCE= -4V

tVE-2

DC Current Gain

lc=-0.1A;VCE=-4V

fr

Current-Gain—Bandwidth Product

lc= -0.5A; VCE= -4V

• hFE-i Classifications

A

B

C

35-70 50-120 100-200

2SA754

MIN TYP. MAX UNIT

-50

V

-50

V

-4

V

-1.3

V

-1.5

V

-100 M A

35

200

35

50

MHz

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