A768 查看數據表（PDF） - New Jersey Semiconductor
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A768 Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Unc.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SA768
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
:V(BR)CEO= -60(V)(Min.)
• Complement to Type 2SC1826
APPLICATIONS
• Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-60
V
VCEO Collector-Emitter Voltage
-60
V
VEBO Emitter-Base Voltage
-6
V
Ic
Collector Current-Continuous
IB
Base Collector Current-Continuous
Total Power Dissipation
PC
@ Tc-25'C
Tj
Junction Temperature
-4
A
-1
A
30
W
150
•c
Tstg
Storage Temperature Range
-55-150 'C
w
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2.COLLECTOR
3-BWIITTER
TO-220C package
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DIN MIN n«w<
A 15,50 15.90
B 9.90 10.20
C 4.20 4.50
D 0.70 0.90
F 3.40 3.70
G 4.9S 5.18
H 2.68 2.90
J 0.44 0.60
K 13.00 13.40
L 1.20 1.45
0 2.70 2.90
R 2.30 2.70
S 1.29 1.35
U 6.45 6.65
V 8.66 8.86
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \vithout
notice, hitorination lumished by N.I Semi-Conductors is believed to be both accurate and reliable at the time o
to pie-*. I kmever. NJ Semi-Conductors assumes no responsibility for any errors or omissionsdiscovered in its use
^J Senu-( onductors enciuiruges customers to verify that datasheets are current before plaeiii" orders
Quality Semi-Conducfors
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