A768 查看數據表（PDF） - New Jersey Semiconductor
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A768 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= -25rnA; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= -2A; IB= -0.2A
ICBO
Collector Cutoff Current
VCB= -60V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -6V; lc= 0
UPS
DC Current Gain
lc= -1A; VCE= -4V
fr
Current-Gain—Bandwidth Product
IE=0.2A; VCE=-10V
Switching Times
tr
Rise Time
tstg
Storage Time
tf
Fall Time
lc= -2A ,RL= 3D ,
lei= -IB2- -0.3A.Vcc- -6V
2SA768
MIN TYP. MAX UNIT
-60
V
-1.0
V
-1.0 mA
-1.0 mA
40
10
MHz
1.0
us
0.4
us
0.15
Vs
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