2SA562 查看數據表（PDF） - Tiger Electronic

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2SA562

TO-92 Plastic-Encapsulate Transistors

Tiger Electronic 

TIGER ELECTRONIC CO.,LTD

TO-92 Plastic-Encapsulate Transistors

2SA562 TRANSISTOR (PNP)

FEATURES

Excellent hFE Linearlity

TO-92

1. EMITTER

2. COLLECTOR

3. BASE

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current -Continuous

PC

Collector Power Dissipation

Tj

Junction Temperature

Tstg

Storage Temperature

Value

-35

-30

-5

-500

500

150

-55-150

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

Symbol

Test conditions

Min

V(BR)CBO IC= -100μA , IE=0

-35

V(BR)CEO IC= -1mA , IB=0

-30

V(BR)EBO IE= -100μA, IC=0

-5

ICBO

VCB=-35V, IE=0

IEBO

VEB= -5V, IC=0

hFE

VCE=-1V, IC=-100mA

70

VCE(sat)

IC= -100mA, IB= -10mA

VBE

VCE=-1V,IC=-100mA

fT

VCE= -6V, IC= -20mA

Cob

VCB=-6V,IE=0,f=1MHz

Typ

200

13

Unit

V

V

V

mA

mW

℃

℃

Max

-0.1

-0.1

240

-0.25

-1

Unit

V

V

V

μA

μA

V

V

MHz

pF

CLASSIFICATION OF hFE

RANK

RANGE

O

70-140

Y

120-240

%'HF,2011

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