2SA1011 查看數據表（PDF） - Quanzhou Jinmei Electronic

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2SA1011

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ,RBE=∞

V(BR)CBO Collector-base breakdown voltage

IC=-1mA; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-1mA; IC=0

VCEsat Collector-emitter saturation voltage IC=-0.5A; IB=-50mA

VBE

Base-emitter voltage

IC=-10mA ; VCE=-5V

ICBO

Collector cut-off current

VCB=-120V; IE=0

IEBO

Emitter cut-off current

VEB=-4V; IC=0

hFE

DC current gain

IC=-0.3A ; VCE=-5V

fT

Transition frequency

IC=-50mA ; VCE=-10V

Cob

Output capacitance

IE=0; f=1MHz ; VCB=-10V

Switching times resistive load

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=-0.5A ;IB1=-IB2=-50mA

VCC=20V; RL=40Ω

‹ hFE Classifications

D

E

60-120 100-200

Product Specification

2SA1011

MIN TYP. MAX UNIT

-160

V

-180

V

-6

V

-0.5

V

-1.5

V

-10 μA

-10 μA

60

200

100

MHz

30

pF

0.29

μs

0.48

μs

0.19

μs

2

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