2SA1011 查看數據表（PDF） - Foshan Blue Rocket Electronics Co.,Ltd.

零件编号

产品描述 (功能)

生产厂家

2SA1011

Silicon PNP transistor in a TO-220 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

2SA1011

Rev.F Mar.-2016

DATA SHEET

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Current – Continuous(Pulse)

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

ICP

PC

PC(TC=25℃ )

Tj

Tstg

数值

Rating

-180

-160

-6.0

-1.5

-3.0

2.0

25

150

-55～150

单位

Unit

V

V

V

A

A

W

W

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector to Emitter Breakdown

Voltage

Collector to Emitter Breakdown

Voltage

Emitter to Base Breakdown

Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Collector to Emitter Saturation

Voltage

Base to Emitter Voltage

Transition Frequency

Collector output capacitance

Turn-On Time

Turn-Off Time

Storage Time

符号

Symbol

测试条件

Test Conditions

VCBO IC=-1.0mA IE=0

最小值 典型值 最大值

Min Typ Max

-180

单位

Unit

V

VCEO IC=-1.0mA IB=0

-160

V

VEBO IE=-10mA IC=0

-6.0

V

ICBO VCB=-120V IE=0

IEBO VEB=-4.0V IC=0

hFE VCE=-5.0V IC=-300mA 60

-10 μA

-10 μA

200

VCE(sat) IC=-500mA IB=-50mA

-0.5

V

VBE VCE=-5.0V IC=-10mA

fT VCE=-10V IC=-50mA

Cob VCB=-10V f=1.0MHz

ton

toff -10IB1=10IB2=-IC=-0.5A

tstg

-1.5

100

30

0.29

0.19

0.48

V

MHz

pF

μs

μs

μs

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