2SA1664 查看數據表（PDF） - Galaxy Semi-Conductor

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2SA1664

Plastic-Encapsulated Transistor

Galaxy Semi-Conductor 

Production specification

Plastic-Encapsulated Transistor

2SA1664

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN

TYP MAX UNIT

Collector-base breakdown voltage

V(BR)CBO IC=-1mA,IE=0

-35

V

Collector- emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0

-30

V

Emitter- base breakdown voltage

V(BR)EBO IE=-1mA, IC=0

-5

V

Collector cut-off current

ICBO

VCB=-35V,IE=0

-0.1 μA

Emitter cut-off current

IEBO

VEB=-5V,IC=0

-0.1 μA

DC current gain

Collector-emitter saturation voltage

Base-emitter

Transition frequency

hFE

VCE(sat)

VBE

fT

VCE=-1V,IC=-100mA 100

VCE=-1V,IC=-700mA 35

IC=-500mA,IB=-20mA

VCE=-1V,IC=-10mA

-0.5

VCE=-5V, IC=-10mA

320

-0.7 V

-0.8 V

120

MHz

Collector output capacitance

Cob

VCB=-10V,IE=0,f=1MHz

19

pF

CLASSIFICATION OF hFE

Rank

Range

Marking

O

100-200

RO

Y

160-320

RY

E075

Rev.A

www.gmesemi.com

2

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