2SA1726 查看數據表（PDF） - New Jersey Semiconductor

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2SA1726

Silicon PNP PowerTransistor

New Jersey Semiconductor 

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

ioaucta, Una.

Silicon PNP Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

2SA1726

DESCRIPTION

• Low Collector Saturation Voltage

:VcE<satr -0.5(V)(Max)@lc= -2A

• High Switching Speed

• Complement to Type 2SC4512

APPLICATIONS

• Designed for audio and general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25'C)

SYMBOL

PARAMETER

VALUE UNIT

VCBO Collector-Base Voltage

-80

V

VCEO Collector-Emitter Voltage

-80

V

VEBO Emitter-Base Voltage

-6

V

Ic

Collector Current-Continuous

-6

A

IB

Base Collector Current-Continuous

Total Power Dissipation

PC

@ TC=25°C

Tj

Junction Temperature

-3

A

50

W

150

'C

Tstg

Storage Temperature Range

-55-150 'C

PIN 1.BASE

2.COLLECTOR

3. EMITTER

TO-220C package

;.. B -

s

X"

'v° kyi

A

'':'•

*H

K

:L

D

r-

HH^

H

-» I

c

,

mm

DIN WIN MAX

A 15,50 15.90

B 9.90 10.20

C 4.20 4.50

D 0.70 0.90

F 3.40 3.70

G 4.98 5.18

H 2.68 2.90

J 0.44 0.60

K 13.00 13.40

L 1.20 1.45

Q 2.70 2.90

R 2.30 2.70

S 1.29 1,35

LI 6.45 6.65

V 8.66 8.86

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without

notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going

to press. However. N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.

NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

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