UTC2SA1740 查看數據表（PDF） - Unisonic Technologies

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UTC2SA1740

PNP EPITAXIAL SILICON TRANSISTOR

Unisonic Technologies 

UTC 2SA1740

PNP EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE DRIVER

APPLICATION

FEATURES

1

*High breakdown voltage.

*Excellent hFE linearity.

SOT-89

1:EMITTER 2:COLLECTOR 3:BASE

ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )

PARAMETER

SYMBOL

RATING

Collector-Base Voltage

VCBO

-400

Collector-Emitter Voltage

VCEO

-400

Emitter-Base Voltage

VEBO

-5

Collector Current

Ic

-200

Collector Current (PULSE)

Icp

-400

Collector Power Dissipation

Pc

1.3

Junction Temperature

Tj

150

Storage Temperature

TSTG

-55 ~ +150

UNIT

V

V

V

mA

mA

W

°C

°C

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

Collect-Base Breakdown Voltage

BVCBO IC= -10µA,IE=0

-400

Collect-Emitter Breakdown Voltage

BVCEO IC= -1mA,IB=0,RBE=∞

-400

Emitter-Base Breakdown Voltage

BVEBO IE= -10µA,IC=0

-5

Collector Cutoff Current

ICBO VCB= -300V,IE=0

Emitter Cutoff Current

IEBO VEB= -4V,IC=0

DC Current Transfer Ratio

hFE VCE= -10V, Ic= -50mA

60

Collect-Emitter Saturation Voltage

VCE(sat) IC= -50mA,IB= -5mA

Base-Emitter Saturation Voltage

VBE(sat) IC= -50mA,IB= -5mA

Output Capacitance

Cob VCB=-30V, f=1MHz

Reverse Transfer Capacitance

Cre VCB =-30V,f=1MHz

Gain-Bandwidth Product

fT

VCE= -30V,IC= -10mA

Turn-on Time

ton

See test circuit

Turn-off Time

toff

See test circuit

TYP

-0.8

5

4

70

0.25

5.0

MAX

-0.1

-0.1

200

-1.0

UNIT

V

V

V

µA

µA

V

V

pF

pF

MHz

µs

µs

UTC UNISONIC TECHNOLOGIES CO. LTD 1

QW-R208-026,A

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