UTC2SA1740 查看數據表（PDF） - Unisonic Technologies
零件编号
产品描述 (功能)
生产厂家
UTC2SA1740 Datasheet PDF : 4 Pages
| |||
UTC 2SA1740
PNP EPITAXIAL SILICON TRANSISTOR
CLASSIFICATION OF hFE
RANK
D
RANGE
60-120
E
100-200
TEST CIRCUIT (Unit : (resistance : Ω, capacitance : F)
IB1
INPUT
RB
OUTPUT
PW=20 μs
Duty Cycle≦1%
IB2
VR
50
+
100μ
RL
+
470μ
VCC= -150V
VBE= 1V
-10IB1= 10IB2=Ic= -50mA
RL=3kΩ,RB=200Ω at Ic= -50mA
ELECTRICAL CHARACTERISTICS CURVES
-120
-100
-80
IC-VBE
VCE=-10V
-60
TA=25℃
-40
TA=70℃
-20
TA= -30℃
0
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
Base to Emitter Voltage,VBE-V
S i h Ti I
hFE-Ic
5
3
TA=70℃
VCE=-10V
2
100
TA=25℃
7
5
TA= -30℃
3
2
10
7
5
7-1.0
2
3
5 7 -10 2 3
5 7-100 2 3
Collector Current,Ic- mA
UTC UNISONIC TECHNOLOGIES CO. LTD 2
QW-R208-026,A
Share Link: 