A1880 查看數據表（PDF） - Quanzhou Jinmei Electronic

零件编号

产品描述 (功能)

生产厂家

A1880

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=-0.1A ;IB=0

VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A

VBEsat Base-emitter saturation voltage

IC=-5A; IB=-0.5A

ICBO

Collector cut-off current

ICEO

At rated volatge

IEBO

Emitter cut-off current

At rated volatge

hFE

DC current gain

IC=-5A ; VCE=-2V

fT

Transition frequency

IC=-1A ; VCE=-10V

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=-5A;IB1=-IB2=-0.5A ,

RL=5Ω;VBB2=-4V

Product Specification

2SA1880

MIN TYP. MAX UNIT

-80

V

-0.3

V

-1.2

V

-0.1 mA

-0.1 mA

70

50

MHz

0.3 μs

1.5 μs

0.2 μs

2

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