2SC2261 查看數據表（PDF） - New Jersey Semiconductor
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2SC2261 Datasheet PDF : 2 Pages
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J.EIIE.U
Cx
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC2261
DESCRIPTION
• High Power Dissipation-
: Pc= 80W(Max.)@Tc=25°C
• Collector-Emitter Breakdown Voltage-
:V(BR)CEo=120V(Min.)
• Complement to Type 2SA981
APPLICATIONS
• Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
180
V
VCEO Collector-Emitter Voltage
120
V
VEBO Emitter-Base Voltage
6
V
Ic
Collector Current-Continuous
8
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25"C
T,
Junction Temperature
3
A
80
W
150
'C
Tstg
Storage Temperature
-65-150
"C
,
PIN 1. BASE
yS
2. EMITTER
r»
3. COLLECT OR (CASE)
I
TO-3 package
r.—.fl —•M
(*- N-*j
: t i 1
1 _, C
|
—Ik- 0 ! PL
•f^l
? /"' ^X / 1 t
f
IT!™^
v^f ^/
c1i'
B
I
H3B
1 111 It
OtM MM MAX
A
5900
B 2530 56.67
C.
?80 S.60
D
O.SO 1 tO
£
t 10 ,60
G
1092
H
64&
K
l-.iO 1350
L 16 7S 1705
N 19 «3 19 $2
q 400 420
U
-JOCW 30 20
V
430 450
N.I Scmi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time ot'Lioin
in press. I luv\c\er. N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use,
\J Seiiii-Conductors eua>ura»es customers to verily that datasheets are current before placing orders.
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