2SB1429 查看數據表（PDF） - SavantIC Semiconductor

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2SB1429

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB1429

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0

VCEsat Collector-emitter saturation voltage IC=-8A ;IB=-0.8A

VBE

Base-emitter voltage

IC=-6A ; VCE=-5V

ICBO

Collector cut-off current

VCB=-180V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE-1

DC current gain

IC=-1A ; VCE=-5V

hFE-2

DC current gain

IC=-6A ; VCE=-5V

fT

Transition frequency

IC=-1A ; VCE=-5V

COB

Collector output capacitance

IE=0;f=1MHz;VCB=-10V

MIN TYP. MAX UNIT

-180

V

-3.0

V

-1.5

V

-5

µA

-5

µA

55

160

30

10

MHz

340

pF

hFE-1 classifications

R

O

55-10

80-160

2

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