2SB1257 查看數據表（PDF） - New Jersey Semiconductor
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2SB1257 Datasheet PDF : 2 Pages
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Silicon PNP Darlington Power Transistor
2SB1257
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
ViBRlCECI Collector-Emitter Breakdown Voltage lc=-10mA; IB=0
-60
V
Vct(sal) Collector-Emitter Saturation Voltage lc= -3A; ln= -6mA
VsE(sat) Base-Emitter Saturation Voltage
lc= -3A; IB= -6mA
ICBO
Collector Cutoff Current
VCB= -60V, le=0
-1.5
V
-2.0
V
-10
MA
Icoo
Emitter Cutoff Current
VF.B= -6V, lc=0
-5
mA
ru-fc
DC Current Gain
lc= -3A; VCE= -4V
2000
COB'
Output Capacitance
!E=O; VCB= -10V; ftea,= 1.0MHz
75
PF
f-r
Current-Gain—Bandwidth Product lc=0.2A; Vce=-12V
150
MHz
Switching Times
ton
Turn-on Time
tslg
Storage Time
" tf
Fall Time
Ic- -3A, IB1= -102= -10mA,
Vcc -30V RL=10n
04
us
0.8
MS
0.6
Ms
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