MP5006S 查看數據表（PDF） - Nell Semiconductor Co., Ltd
零件编号
产品描述 (功能)
生产厂家
MP5006S Datasheet PDF : 3 Pages
| |||
SEMICONDUCTOR
MP50S RRooHHSS
Nell High Power Products
PRIMARY CHARACTERRISTICS
IF(AV)
50A
VRRM
600V to 1200V
IFSM
450A
IR
2 µA
VF
1.1V
TJ max.
150ºC
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified output current (Fig.1)
Peak forward surge current single sine-wave superimposed on
rated load
SYMBOL
VRRM
VRMS
VDC
IF(AV)
06
600
420
600
IFSM
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)
for fusing
RMS isolation voltage from case to leads
Operating junction storage temperature range
Storage temperature range
I2t
VISO
TJ
TSTG
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
TEST
SYMBOL
CONDITIONS
06
Maximum instantaneous forward drop per diode
IF = 25A
VF
Maximum reverse DC current at rated DC blocking
TA = 25°C
voltage per diode
IR
TA = 150°C
Typical junction capacitance per diode
4V, 1MHz
CJ
MP50..S
08
10
800
1000
560
700
800
1000
50
450
12
1200
840
1200
UNIT
V
V
V
A
A
840
A2s
2500
V
-40 to 150
ºC
-25 to 125
ºC
MP50..S
08
10
1.1
2
1000
300
UNIT
12
V
µA
pF
THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
06
Typical thermal resistance
RθJC(1)
MP50..S
08
10
1.2
UNIT
12
°C/W
Notes
(1) With heatsink
(2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with
M5 screw
www.nellsemi.com
Page 2 of 3
Share Link: 