2SB1064 查看數據表（PDF） - New Jersey Semiconductor

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2SB1064

Silicon PNP Power Transistor

New Jersey Semiconductor 

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

, Due,

Silicon PNP Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

2SB1064

DESCRIPTION

• Low Collector Saturation Voltage

: VCE(sat)= -1.0V(Max)@lc= -2A

• Wide Area of Safe Operation

• Complement to Type 2SD1505

APPLICATIONS

• Designed for low frequency power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25'C)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

-60

V

VCEO Collector-Emitter Voltage

-50

V

VEBO Emitter-Base Voltage

-5

V

Ic

Collector Current-Continuous

-3

A

ICM

Collector Current-Peak

Total Power Dissipation

@ Ta=25°C

PC

Total Power Dissipation

@ TC=25'C

Tj

Junction Temperature

-4.5

A

1.5

W

30

150

°C

Tstg

Storage Temperature Range

-55-150 'C

. .-„

2

!

' ; '"

! '3

PIH: 1 Base

2 Collector

3 Emitter

TO-220C package

^ BH

«-$

!

* * Q J_pf[

A~

t>

pc T »

* H"

K

-H

C

]1

i

mm

P!W WIN MAX

A 15.50 15.90

B 9.90 10.20

C 4.20 4,50

D 0.70 0.90

F 3.40 3.70

G 4.98 5.18

H Z 68 2.90

J 0.44 0.60

K 13.00 13.40

L 1.10 1.45

0 2.70 2.90

R 2.30 2.70

S 1.29 1.35

U 6.45 6.65

V 8.66 8.86

N.I Semi-Conductors reserves the right to ehange test conditions, parameter limits and puekiige dimensions\\ithout

notice. Information furnished by N.I Semi-C'onduetors is believed to he both accurate and reliable at the time of goina

to press. I lm\e\cr, N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in it's use.

N.I Semi-Conductors eiicourn»es customers to \erily that datasheets are current before placing orders.

Quality 5emi-Conductors

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