2SC3047 查看數據表（PDF） - Quanzhou Jinmei Electronic

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2SC3047

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0

V(BR)CBO Collector-base breakdown voltage

IC=1mA ; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ; IC=0

VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A

VBEsat Base-emitter saturation voltage

IC=2A; IB=0.4A

ICBO

Collector cut-off current

VCB=850V ;IE=0

IEBO

Emitter cut-off current

VEB=10V; IC=0

hFE

DC current gain

IC=0.5 A ; VCE=5V

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=1A; IB1=0.1A

IB2=-0.2A;RL=300Ω

Product Specification

2SC3047

MIN TYP. MAX UNIT

500

V

850

V

10

V

0.5

V

1.2

V

1

mA

1

mA

15

1.0 μs

3.0 μs

1.0 μs

2

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