2SC3047 查看數據表（PDF） - New Jersey Semiconductor
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2SC3047 Datasheet PDF : 2 Pages
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^E.mi-dondu.cto't iJ loducti, (inc..
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
2SC3047
DESCRIPTION
• High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
2
• High Switching Speed
• High Reliability
APPLICATIONS
• Switching regulators
• Ultrasonic generators
• High frequency inverters
• General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
•'
1I ^ ; j
PIN 1.BASE
2. COLLECTOR
, I \. EMITTER
i23
TO-220C package
-• e M
U f rkbt
c-
—,
VCBO
VCEO
VEBO
Ic
IB
PC
Tj
Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation
@ TC=25'C
Junction Temperature
Storage Temperature Range
850
V
500
V
10
V
6
A
2
A
40
W
150
"C
-55-150
"C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance, Junction to Case
3.0
•c/w
K
f
PL-fI ^U<"ft°
H G [*-
-.
C| ' ]
i
mm
Did/ WIN MAX
A 15.50 15.90
B 9.90 10.20
C 4.20 4.50
D 0.70 0.90
F 3.40 3.70
G 4.98 5.18
K 2.68 2.90
J 0.44 0.60
K 13.00 13.40
L 1.20 1.45
0 2.70 2.90
R 2.30 2.70
S 1.29 1.35
U 6.45 6.65
V 8.66 8.86
N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions uithout
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time ol'goin
lo press. I lo\\e\er. N.I Scmi-Coiiductors assumes no responsibility for anv errors or omissions discovered in its toe.
N I Scnii-Conduciors enci>ura»es customers to \erily (hat datasheets are ciinvnl before placing orders.
-Semi-Conductors
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