2SC3047 查看數據表（PDF） - New Jersey Semiconductor
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2SC3047 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= 10mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
lc= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
lE=1mA;lc=0
VcE(sat) Collector-Emitter Saturation Voltage lc= 2A; IB= 0.4A
VsEfsat) Base-Emitter Saturation Voltage
IG= 2A; IB= 0.4A
ICBO
Collector Cutoff Current
VCB= 850V; IE= 0
IEBO
Emitter Cutoff Current
VEB=10V;IC=0
hFE
DC Current Gain
lc= 0.5A; VCE= 5V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
lc=1A, IB1=0.1A; IB2=-0.2A;
RL= 300Q ;PW= 20|J s
Duty Cycle ^2%
2SC3047
MIN TYP. MAX UNIT
500
V
850
V
7
V
0.5
V
1.2
V
1.0 mA
1.0 mA
15
1.0 M s
3.0 M s
1.0 M s
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