2SC3052 查看數據表（PDF） - Galaxy Semi-Conductor
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2SC3052 Datasheet PDF : 4 Pages
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Production specification
Silicon Epitaxial Planar Transistor
2SC3052
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP
Collector-base breakdown voltage
V(BR)CBO IC=100μA,IE=0
50
MAX UNIT
V
Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO IE=100μA,IC=0
6
Collector cut-off current
ICBO
VCB=50V,IE=0
Emitter cut-off current
IEBO
VEB=6V,IC=0
DC current gain
VCE=6V,IC=1mA
150
hFE
VCE=6V,IC=0.1mA
90
Collector to Emitter saturation voltage VCE(sat) IC=100mA, IB=10mA
V
0.1 μA
0.1 μA
800
0.3 V
Collector output capacitance
Cob
Transition frequency
fT
Noise Figure
NF
CLASSIFICATION OF hFE
VCB=6V,IE=0,f=1MHz
VCE=6V, IC= 10mA
VCE=6V,IE=0.1mA,
f=1kHz,RG=2kΩ
2.5
pF
200
MHz
20 dB
Rank
Range
Marking
E
150-300
LE
F
250-500
LF
G
400-800
LG
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
C159
Rev.A
www.gmicroelec.com
2
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