FGL60N100D 查看數據表（PDF） - Fairchild Semiconductor

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FGL60N100D

Insulated Gate Bipolar Transistors (IGBTs)

Fairchild Semiconductor 

10000

Cies

1000

Coes

100 Common Emitter

V = 0V, f = 1MHz

GE

T=

25

℃

C

Cres

0.1

1

10

Collector-Emitter Voltage [V]

Fig 7. Capacitance Characteristics

1000

Tdoff

V =600V, Rg=51Ω

VCC=± 15V, T =25℃

GE

C

Tf

Tr

Tdon

100

10

20

30

40

50

60

Collector Current, IC [A]

Fig 9. Switching Characteristics vs.

Collector Current

I MAX. (Pulsed)

C

100 IC MAX. (Continuous)

50us

100us

10

1ms

DC Operation

1

Single Nonrepetitive Pulse

T = 25℃

C

Curves must be derated

linearly with increase

in temperature

0.1

1

10

100

Collector-Emitter Voltage, VCE [V]

1000

Fig 11. SOA Characteristics

©2002 Fairchild Semiconductor Corporation

10000

1000

V =600V, I =60A

CC

C

VGE=± 15V

Tr

Tf

100 Tdoff

Tdon

10

0

50

100

150

200

Gate Resistance, RG [Ω ]

Fig 8. Switching Characteristics vs.

Gate Resistance

20

Common Emitter

V =600V, R =10 Ω

CC

L

T =25 ℃

C

15

10

5

0

0

50

100

150

200

250

300

Gate Charge, Qg [nC]

Fig 10. Gate Charge Characteristics

10

1

0.5

0.2

0.1 0.1

0.05

0.02

0.01

0.01

single pulse

1E-3

10-4

10-3

10-2

10-1

100

101

Rectangular Pulse Duration [sec]

Fig 12. Transient Thermal Impedance of IGBT

FGL60N100D Rev. A

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