2SC4592 查看數據表（PDF） - Hitachi -> Renesas Electronics

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2SC4592

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SC4592

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

15

V

9

V

1.5

V

50

mA

150

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Collector to base breakdown

voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector output capacitance

Symbol Min

V(BR)CBO

15

I CBO

—

I CEO

—

I EBO

—

hFE

40

Cob

—

Gain bandwidth product

Power gain

fT

7.0

PG

11.0

Noise figure

NF

—

Note: Marking is “XN–”.

Typ

—

—

—

—

120

0.8

9.5

14.0

1.2

Max

—

1

1

10

250

1.5

—

—

2.5

Unit

V

µA

mA

µA

pF

GHz

dB

dB

Test conditions

IC = 10 µA, IE = 0

VCB = 12 V, IE = 0

VCE = 9 V, RBE = ∞

VEB = 1.5 V, IC = 0

VCE = 5 V, IC = 20 mA

VCB = 5 V, IE = 0,

f = 1MHz

VCE = 5 V, IC = 20 mA

VCE = 5 V, IC = 20 mA,

f = 900 MHz

VCE = 5 V, IC = 5 mA,

f = 900 MHz

2

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