2SC2624 查看數據表（PDF） - New Jersey Semiconductor
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2SC2624 Datasheet PDF : 2 Pages
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^£mi-L.onductoi L/^roducti, Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC2624
DESCRIPTION
• High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
• High Switching Speed
• High Reliability
APPLICATIONS
• Switching regulators
• Ultrasonic generators
• High frequency inverters
• General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
450
V
VCEO
Collector-Emitter Voltage
400
V
VoEO(SUS) Collector-Emitter Voltage
400
V
VEBO
Emitter-Base voltage
7
V
Ic
Collector Current-Continuous
5
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25-C
Tj
Junction Temperature
Tstg
Storage Temperature Range
1.5
A
80
W
150
"C
-55-150
r
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance,Junction to Case 1.17 'C/W
§
1 %3
PIN l.BASE
3. BETTER
TO-3PN package
a —" — c -—
y- ,...F— -s
4W...^
A1 -^ NjOii f •
•• ;
!5
K
G * -L
*
-«.*-j --•D
- -—R •*-N-i-
mm
DIM MIN MAX
A 19.60 20,10'
B 15,50 15,70
C 4.70 4,90
D 0.90 1.10
E 1.90 2.10
F 3,40 3.60
G 2,90 3,20
H 3.20 3.40
J 0.595 0,605
K 20,00 20.70
L 1,90 2.20
H 10.89 10.91
U 4,90 5.10
R 3,35 3,45
S 1.995 2.100
U 5.90 6.10
y 9.90 10.10
N.I Senii-Couductors reserves the right to change test conditions, parameter limits anil package dimensions \vithout
notice. Information furnished hy N,l Semi-Conductorsis believed to he both accurate and reliable at the time of go in i;
10 press. I louever. N.I Semi-O>nduetors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encouni.ues customers to verify thai datasheets are currenl before placing orders.
Quality 5emi-Conductors
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