C2626 查看數據表（PDF） - New Jersey Semiconductor
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C2626 Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC2626
DESCRIPTION
• High Collector-Emitter Breakdown Voltage-
: V(BR)CEo= 400V(Min)
• High Switching Speed
• High Reliability
:,
APPLICATIONS
• Switching regulators
• Ultrasonic generators
• High frequency inverters
• General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
400
V
VCEO
Collector-Emitter Voltage
300
V
VcEO(SUS) Collector-Emitter Voltage
300
V
VEBO
Emitter-Base voltage
7
V
Ic
Collector Current-Continuous
15
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25'C
Tj
Junction Temperature
Tstg
Storage Temperature Range
5
A
80
W
150
'C
-55-150
r
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.55 "C/W
1^
. L1A J& ^-;
•S HI ?£
:
., 2"* 3"
PIN 1. BASE
2. COLLECTOR
3. EMITTER
TO-3PN package
B —- • ^ C —
tM.^v- .F - - s
'uQ*i/
*tr
"'"V
'•
I i-
K
*' •«
G * ^L
I
-•"*- J
-*- D
»• -»-R -^N^
mm
DIM MIN MAX
A 19.60 20.10
B 15.50 15.70
C 4.70 4.90
D 0.90 1.10
E 1.90 2.10
F 3.40 3.60
G 2.90 3.20
B 3.20 3.40
J 0.595 0,605
K 20.00 20,70
L 1.90 2.20
N 10.89 10.91
Q 4.90 5.10
R 3,35 3.45
S 1.995 2,100
U 5.90 6.10
•f 9.90 10.10
N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions uithout
notice. Information furnished by N.I Semi-Conductors is believed to he hoth accurate and reliable at the time of going
to press. I Km ever, N.I Semi-Conductors assumes no responsibility for an> errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify thai datasheets are current before placing orders.
Quality Semi-Conductors
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