1PS302 查看數據表（PDF） - NXP Semiconductors.

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1PS302

Dual high-speed switching diode

NXP Semiconductors. 

1PS302

Dual high-speed switching diode

Rev. 6 — 23 July 2012

Product data sheet

1. Product profile

1.1 General description

Dual high-speed switching diode, encapsulated in a very small SOT323 (SC-70)

Surface-Mounted Device (SMD) plastic package.

1.2 Features and benefits

 High switching speed: trr  4 ns

 Repetitive peak reverse voltage:

VRRM  85 V

 Reverse voltage: VR  80 V

 AEC-Q101 qualified

 Low capacitance: Cd  1.5 pF

 Repetitive peak forward current:

IFRM  500 mA

 Very small SMD plastic package

1.3 Applications

 High-speed switching

 General-purpose switching

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter

Per diode

IF

forward current

Conditions

IR

reverse current

VR = 80 V

VR

reverse voltage

trr

reverse recovery time

Min Typ Max Unit

[1]

[2] -

-

200 mA

[3] -

-

170 mA

-

-

0.5 A

-

-

80

V

[4] -

-

4

ns

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2] Single diode loaded.

[3] Double diode loaded.

[4] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.

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