1PS302,135 查看數據表（PDF） - NXP Semiconductors.
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1PS302,135 Datasheet PDF : 12 Pages
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NXP Semiconductors
1PS302
Dual high-speed switching diode
300
IF
(mA)
200
100
006aac851
(1)
(2) (3)
0
0.0
0.5
1.0
1.5
2.0
VF (V)
(1) Tj = 150 C; typical values
(2) Tj = 25 C; typical values
(3) Tj = 25 C; maximum values
Fig 1. Forward current as a function of forward
voltage
0.8
Cd
(pF)
0.6
006aac852
0.4
0.2
102
IR
(μA)
10
(1)
1
(2)
(3)
mbg380
10−1
10−2
0
100
Tj (°C)
200
(1) VR = 80 V; maximum values
(2) VR = 80 V; typical values
(3) VR = 25 V; typical values
Fig 2. Reverse current as a function of junction
temperature
300
IF
(mA)
200
(1)
mbg443
(2)
100
0.0
0
4
8
f = 1 MHz; Tamb = 25 C
12
16
VR (V)
Fig 3. Diode capacitance as a function of reverse
voltage; typical values
0
0
100
Tamb (°C)
200
FR4 PCB, standard footprint
(1) single diode loaded
(2) double diode loaded
Fig 4. Forward current as a function of ambient
temperature; derating curves
1PS302
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 23 July 2012
© NXP B.V. 2012. All rights reserved.
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