1PS301,115 查看數據表（PDF） - NXP Semiconductors.
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1PS301,115 Datasheet PDF : 12 Pages
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NXP Semiconductors
1PS301
Dual high-speed switching diode
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per device
Ptot
Tj
Tamb
Tstg
total power dissipation
junction temperature
ambient temperature
storage temperature
Tamb 25 C
[1] -
-
55
65
Max
300
150
+150
+150
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Single diode loaded.
[3] Double diode loaded.
[4] Tj = 25 C before surge.
6. Thermal characteristics
Unit
mW
C
C
C
Table 6. Thermal characteristics
Symbol Parameter
Per device
Rth(j-a)
thermal resistance from
junction to ambient
Rth(j-sp)
thermal resistance from
junction to solder point
Conditions
in free air
Min Typ Max Unit
[1] -
-
415 K/W
-
-
200 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 7. Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VF
forward voltage
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 100 mA
IR
reverse current
VR = 25 V
VR = 80 V
VR = 25 V; Tj = 150 C
VR = 80 V; Tj = 150 C
Cd
diode capacitance
f = 1 MHz; VR = 0 V
trr
reverse recovery time
VFR
forward recovery voltage
Min Typ
-
610
-
740
-
-
-
-
-
-
-
-
-
-
-
-
-
-
[1] -
-
[2] -
-
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.
[2] When switched from IF = 10 mA; tr = 20 ns.
Max Unit
-
mV
-
mV
1.0 V
1.2 V
30 nA
0.5 A
30 A
100 A
1.5 pF
4
ns
1.75 V
1PS301
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 6 March 2012
© NXP B.V. 2012. All rights reserved.
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