C2898 查看數據表（PDF） - New Jersey Semiconductor

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C2898

Silicon NPN Power Transistor

New Jersey Semiconductor 

, fine.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

Silicon NPN Power Transistor

TELEPHONE: (973) 376-2922

(212) 227-6005

FAX: (973) 376-8960

2SC2898

DESCRIPTION

• Collector-Emitter Sustaining Voltage- :.

: VCEo(sus)= 400V(Min)

• Collector-Emitter Saturation Voltage-

: VcEoatr 1.0V(Max)@ lc= 4A, IB= 0.8A

• Fast Switching Speed

•

i1 -

PIN 1. BASE

2. COLLECTOR

3. EMITTER

TO-220C package

APPLICATIONS

• Designed for high-voltage, high-speed and high power

switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25'C)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

500

V

VCEO Collector-Emitter Voltage

400

V

VEBO Emitter-Base Voltage

7

V

Ic

Collector Current-Continuous

8

A

ICM

Collector Current-Peak

16

A

IB

Base Current-Continuous

Total Power Dissipation

PC

@ Tc-25 C

Tj

Junction Temperature

4

A

50

W

150

C

Tstg

Storage Temperature Range

-55-150 °c

•*, B »•

«S

Hero "S -' -. v •« 1

AU' i

' MlQ f *

-L

K

' U I•y D

-^ C•- h

I

cH

i

T* J

H *H

mm

DIM MM MAX

A 15,50 15.90

B 9.90 10,20

C 4.20 450

D 0.70 0.90

h 3.40 3.70

G 4.98 5.18

H :.es 2.90

J 0.44 0.60

K 13.00 13.40

L 1.20 1.45

Q 2.70 2.90

R 2.30 2.70

S 1.29 1.35

U 6.45 6.65

V 8.66 8.86

N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without

noiiee. Information Hirni.shed hy N.I Semi-Conductors is believed to he holh accurate and reliable at the time ofmiin

(o press. llo\\e\er. N.I Semi-Conductors assumes no responsihilil\r an> errors or omissions discovered in its use.

Nl Scmi-Conduciors encnura»es L-usiomcrs In verily that dataslieets are cunvnt hcloiv placing orders.

Quality 5emi-Conductors

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