C2898 查看數據表（PDF） - New Jersey Semiconductor
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C2898 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage lc=30mA ; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10mA; lc= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= 4A; IB= 0.8A
VeE(sal) Base-Emitter Saturation Voltage
lc= 4A; IB= 0.8A
ICBO
Collector Cutoff Current
VCB= 400V ; IE=0
ICEO
Collector Cutoff Current
VCE= 350V ; RBE=0
hpE-1
DC Current Gain
lc= 4A ; VCE= 5V
hFE-2
DC Current Gain
lc= 8A ; VCE= 5V
Switching times
'on
Turn-on Time
tstg
Storage Time
tf
Fall Time
lc=8A,lBi=-lB2=1.6A,Vcc« 150V
2SC2898
MIN MAX UNIT
400
V
7
V
1.0
V
1.5
V
50
uA
50
MA
15
7
0.8
us
2.0
Ms
0.8
Ms
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