2N2484 查看數據表（PDF） - New Jersey Semiconductor
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2N2484 Datasheet PDF : 2 Pages
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'leiis-u
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
NPN general purpose transistor
2N2484
FEATURES
• Low current (max. 50 mA)
• Low voltage (max. 60 V)
APPLICATIONS
• General purpose switching and amplification
• High performance (low-level), low-noise amplifier
applications both for direct current and frequencies
up to 100 MHz.
DESCRIPTION
NPN transistor in a TO-18; SOT18 metal package.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to the case
Fig.1 Simplified outline (TO-18; SOT18)
and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCEO
ICM
Plot
"RE
collector-base voltage
collector-emitter voltage
peak collector current
total power dissipation
DC current gain
fr
transition frequency
CONDITIONS
MIN.
open emitter
-
open base
-
-
Tamb < 25 °C
-
lc = 10uA;VCE = 5 V
100
lc = 1 mA; VCE = 5 V
250
lc=10mA;VcE= 5V
-
lc = 0.5 mA; VCE = 5 V; f = 100 MHz 60
TYP.
-
-
-
-
-
-
-
80
MAX.
60
60
100
360
500
-
800
-
UNIT
V
V
mA
mW
MHz
NJ Semi-Conductors reserves the right to change test conditions,parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductorsassumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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