TISP4072F3SL 查看數據表（PDF） - Power Innovations
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TISP4072F3SL Datasheet PDF : 12 Pages
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TISP4072F3, TISP4082F3
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
MARCH 1994 - REVISED SEPTEMBER 1997
absolute maximum ratings
RATING
Repetitive peak off-state voltage (0°C < TJ < 70°C)
‘4072F3
‘4082F3
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)
1/2 µs (Gas tube differential transient, open-circuit voltage wave shape 1/2 µs)
2/10 µs (FCC Part 68, open-circuit voltage wave shape 2/10 µs)
8/20 µs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs)
10/160 µs (FCC Part 68, open-circuit voltage wave shape 10/160 µs)
5/200 µs (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs)
0.2/310 µs (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs)
5/310 µs (CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs)
5/310 µs (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs)
10/560 µs (FCC Part 68, open-circuit voltage wave shape 10/560 µs)
10/1000 µs (REA PE-60, open-circuit voltage wave shape 10/1000 µs)
Non-repetitive peak on-state current (see Notes 2 and 3)
D Package
50 Hz, 1 s
SL Package
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A
Junction temperature
Storage temperature range
SYMBOL
VDRM
ITSP
ITSM
diT/dt
TJ
Tstg
VALUE
± 58
± 66
UNIT
V
120
80
70
60
50
38
50
50
45
35
4
6
250
-40 to +150
-40 to +150
A
A rms
A/µs
°C
°C
NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.
2. Initially the TISP must be in thermal equilibrium with 0°C < TJ <70°C. The surge may be repeated after the TISP returns to its initial
conditions.
3. Above 70°C, derate linearly to zero at 150°C lead temperature.
electrical characteristics for the T and R terminals, TJ = 25°C
PARAMETER
TEST CONDITIONS
TISP4072F3
MIN TYP MAX
Repetitive peak off-
IDRM state current
VD = ±VDRM, 0°C < TJ < 70°C
V(BO) Breakover voltage
dv/dt = ±250 V/ms, RSOURCE = 300 Ω
V(BO)
Impulse breakover volt- dv/dt = ±1000 V/µs, RSOURCE = 50 Ω,
age
di/dt < 20 A/µs
±86
I(BO) Breakover current
dv/dt = ±250 V/ms, RSOURCE = 300 Ω
±0.15
VT
On-state voltage
IT = ±5 A, tW = 100 µs
IH
Holding current
di/dt = +/-30 mA/ms
±0.15
Critical rate of rise of Linear voltage ramp
dv/dt
±5
off-state voltage
Maximum ramp value < 0.85V(BR)MIN
ID
Off-state current
VD = ±50 V
Coff
Off-state capacitance
f = 100 kHz, Vd = 100 mV
(see Note 4)
VD = 0,
VD = -5 V
82
49
VD = -50 V
25
±10
±72
±0.6
±3
±10
140
85
40
NOTE 4: Further details on capacitance are given in the Applications Information section.
TISP4082F3
MIN TYP MAX
±10
±82
±96
±0.15
±0.6
±3
±0.15
±5
±10
82 140
49
85
25
40
UNIT
µA
V
V
A
V
A
kV/µs
µA
pF
pF
pF
thermal characteristics
PARAMETER
RθJA Junction to free air thermal resistance
TEST CONDITIONS
MIN TYP MAX UNIT
Ptot = 0.8 W, TA = 25°C
5 cm2, FR4 PCB
D Package
SL Package
160
°C/W
105
PRODUCT INFORMATION
2
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