C2816 查看數據表（PDF） - New Jersey Semiconductor
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C2816 Datasheet PDF : 2 Pages
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%Ei5.EU <3E.mi-Conau.ctoi ^Product*,
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC2816
DESCRIPTION
• High Collector-Emitter Sustaining Voltage-
: VcEo<susr 400V(Min)
• High Switching Speed
• High Reliability
APPLICATIONS
• Designed for high voltage, high speed and high power
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VOBO Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base voltage
7
V
Ic
Collector Current-Continuous
5
A
I CM
Collector Current-Peak
10
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25 C
Tj
Junction Temperature
Tstg
Storage Temperature Range
2.5
A
40
W
150
"C
-55-150
•c
Mi
i
PIN l.BASE
2. COLLECTOR
S.ayllTTER
TO-220C package
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K
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L
D
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T
DIW
A
B
C
D
F
G
H
J
K
L
a
H
s
u
u
j
mm
MiN
15.50
9.90
4.20
0.70
3.40
4.98
2.68
0.44
13.00
1.20
2.70
2.30
1.29
6.45
8.66
MAX
15.90
10.20
4,50
0.90
3.70
5.18
2.90
0,60
13.40
1.45
2.90
2.70
1.35
6.65
8.86
N.II!Scmi-Cuiitluclors reserves the right to change tost conditions, parameter limits and package dimensions \\ithout
IK nice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of linin
in pies^. I lov\e\er. N.I Seini-Conductors assumes no responsibility lor au\s or omissions discovered in its use.
N.I Semi-l'oiiduclors eiic<uira»es L-ustomers to verily that datasheets arecurrenl be Tore plnciiij.; orders.
Qualify 5emi-Conductor$
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