C2816 查看數據表（PDF） - New Jersey Semiconductor
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C2816 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
2SC2816
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 30mA; IB=0
400
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10mA; lc= 0
7
V
VcE(sat) Collector-Emitter Saturation Voltage lc= 2.5A; IB= 0.5A
VeE(sat) Base-Emitter Saturation Voltage
lc= 2.5A; IB- 0.5A
ICBO
Collector Cutoff Current
VCB= 400V; IE=0
1.0
V
1.5
V
50 M A
ICEO
Collector Cutoff Current
VCE= 350V; RBE= °°
50 M A
hpE-1
DC Current Gain
lc= 2.5A; VCE= 5V
15
hpE-2 DC Current Gain
lc= 5A; VCE= 5V
7
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
lc= 5A, IB1= -IB2= 1A; VCC^150V
0.5 M s
1.5 M s
0.5 M s
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