2N7085 查看數據表（PDF） - Semelab - > TT Electronics plc
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2N7085 Datasheet PDF : 2 Pages
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2N7085
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Test Conditions
STATIC ELECTRICAL RATINGS
V(BR)DSS Drain–Source Breakdown Voltage VGS = 0
ID = 250µA
VGS(th)
Gate Threshold Voltage
VDS = VGS
ID = 250µA
IGSS
Gate – Body Leakage
VDS = 0
VGS = ±20V
IDSS
Zero Gate Voltage Drain Current VDS = 80V
VGS = 0
TJ = 125°C
ID(on)
On–State Drain Current1
VDS = 10V
VGS = 10V
rDS(on)
Drain – Source On–State
Resistance 1
VGS = 10V
ID = 12A
TJ = 125°C
gfs
Forward Transconductance1
VDS = 15V
IDS = 12A
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
VGS = 0
Coss
Output Capacitance
VDS = 25V
Crss
Reverse Transfer Capacitance
f = 1MHz
Qg
Total Gate Charge2
Qgs
Gate Source Charge2
Qgd
Gate Drain Charge2
VDS = 0.5 x V(BR)DSS50V
VGS = 10V
ID = 20A
td(on)
Turn–On Delay Time2
VDD = 50V
ID = 20A
tr
td(off)
tf
Rise Time2
Turn–Off Delay Time2
Fall Time2
VGEN =10V
RL = 2.5W
RG = 4.7W
SOURCE – DRAIN DIODE CHARACTERISTICS
IS
Continuous Current
ISM
Pulsed Current
VSD
Diode Forward Voltage1
IF = 20A
VGS = 0
trr
Reverse Recovery Time
IF = 20A
Qrr
Reverse Recovery Charge
di/dt = 100A/µs
m 1 Pulse test : Pulse Width < 300 s ,Duty Cycle < 2%
2 Independent of Operating Temperature
Min. Typ. Max. Unit
100
V
2
4
V
±100 nA
25
µA
250
20
A
0.06
0.075
W
0.11
0.14
5.0
8.0
S
1400
480
110
35
10
18
13
85
35
75
pF
50
20
nC
25
30
120
ns
80
95
20
A
80
2.5
V
150
400 ns
0.5
µC
THERMAL RESISTANCECHARACTERISTICS
RthJC
RthJA
RthCS
Parameter
Thermal resistance Junction-Case
Thermal resistance Junction-ambient
Thermal resistance Case to Sink
Min.
Typ.
1.0
Max. Unit
2.1
80 °C/W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 7/99
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