2N6497 查看數據表（PDF） - New Jersey Semiconductor
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2N6497 Datasheet PDF : 2 Pages
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ELECTRICAL CHARACTERISTICS< Tc - 25°C unless otherwise noted )
2N6497,2N6498.2N6499 NPN
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector - Emitter Sustaining Voltage (1)
Versus)
V
( lc = 25 mA, IB = 0 )
2N6497
250
2N6498
300
2N6499
350
Collector Cutoff Current
( VCI « 350 V, Vtl(-n = 1 .5 V )
2N6497
CEX
( V£I * 400 V, VBewn = 1 .5 V )
2N6498
( VeK « 450 V, V1K(0_ = 1 .5 V )
2N6499
( Ve( = 175 V, V,...- = 1,5 V, Tc = 100°C ) 2N6497
( VCI = 200 V, VBB((>_ = 1 ,5 V, Tc = 100°C ) 2N6498
( VCE = 225 V, V1B(011| = 1 .5 V, Te = 100°C ) 2N6499
mA
1.0
1.0
1.0
10
10
10
Emitter Cutoff Current
<Vra = 6.0V,lc = 0)
<EBO
mA
1.0
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 2,5A,VCE=10V)
(IC = 5.0A, V c i = 1 0 V )
hrc
10
75
3.0
Collector-Emitter Saturation Voltage
(IC = 2.5A,L = 0.5A)
( lc = 5.0 A, IB = 2.0 A )
Base-Emitter Saturation Voltage
( lc = 2.5 A, IB = 0.5 A )
(IC = 5.0A, IB = 2.0A)
2N6497
2N6498
2N6499
All Devices
CE(«t)
VBB(ra«,
V
1.0
1.25
15
5.0
V
1.5
2.5
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product (2)
( lc = 250 mA, VCE = 10 V, f = 1.0 MHz )
SWITCHING CHARACTERISTICS
Rise Time
Storage Time
Fall Time
VCC = 125V
lc a 2.5 A
IB,=-IB2 = 0.5A
t =0.1 ms
Duty Cycle S2.0%
(1) Pulse Test: Pulse width = SOO^is , Duty Cycle S 2.0%
(2)fT= lh,.l -f(M,
'T
5.0
MHz
<r
1.0
us
*.
2.5
us
tf
1.0
us
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