SD103AWS 查看數據表（PDF） - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

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产品描述 (功能)

生产厂家

SD103AWS

Plastic-Encapsulate Diodes

GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. 

Plastic-Encapsulate Diodes

SCHOTTKY BARRIER DIODE

FEATURES

Low Forward Voltage Drop

Guard Ring Construction for Transient Protection

Negligible Reverse Recovery Time

Low Reverse Capacitance

SD103AWS

SD103BWS

SD103CWS

-

+

MARKING SD103AWS: S4 SD103BWS:S5 SD103CWS: S6

SOD-323

Maximum Ratings and Electrical Characteristics, Single Diode @TA=25

Parameter

Peak Repetitive Peak reverse voltage

Working Peak

DC Reverse Voltage

Symbol

VRRM

VRWM

VR

SD103AWS SD103BWS

40

30

SD103CWS Unit

20

V

RMS Reverse Voltage

VR(RMS)

28

21

14

V

Forward Continuous Current

Repetitive Peak Forward Current,@t≤1.0s

IF

IFSM

350

mA

1.5

A

Power Dissipation

Thermal Resistance Junction to,Ambient

Storage temperature

Pd

RθJA

Tstg

200

625

-65~+125

mW

/W

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter

Symbol Min. Typ. Max. Unit

Reverse Breakdown Voltage

SD103AWS

40

SD103BWS V(BR)R 30

V

SD103CWS

20

Conditions

IR=10A

IR=10A

IR=10A

Forward voltage

VF

0.37

V

IF=20mA

0.60

IF=200mA

Reverse current

Junction Capacitance

SD103AWS

SD103BWS IRM

SD103CWS

CJ

VR=3V

5.0

μA

VR=2V

VR=2V

50

pF VR=0,f=1MHz

Reverse Recovery Time

trr

IR=IF=200mA

10

ns

Irr=0.1*IR,RL=100Ω

GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.

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