LTC1759 查看數據表（PDF） - Linear Technology

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LTC1759

Smart Battery Charger

Linear Technology 

LTC1759

PIN FUNCTIONS

Input Power-Related Pins

UV (Pin 7): Charger Section Undervoltage Lockout Pin.

The rising threshold is 6.7V with a hysteresis of 0.5V.

Switching stops in undervoltage lockout. Connect this

input to the input voltage source with no resistor divider.

UV must be pulled below 0.7V when there is no input

voltage source (5k resistor from adapter output to ground

is required) to obtain the lowest quiescent battery current.

INFET (Pin 8): Gate Drive to Input P-channel FET. For very

low dropout applications, use an external P-channel FET to

connect the adapter output and VCC. INFET is clamped to

7.8V below VCC.

CLP (Pin 9): Positive Input to the Input Current Limit

Amplifier CL1. When used to limit supply current, a filter

(R3 and C1 of Figure 10) is needed to filter out the

switching noise. The threshold is set at 92mV.

CLN (Pin 10): Negative Input to the Input Current Limit

Amplifier CL1. It should be connected to VCC (to the VCC

bypass capacitor C2 for less noise).

COMP1 (Pin 11): Compensation Node for the Input Cur-

rent Limit Amplifier CL1. At input adapter current limit, this

node rises to 1V. By forcing COMP1 low with an external

transistor, amplifier CL1 will be defeated (no adapter

current limit). COMP1 can source 200µA. Ground (to

AGND) this pin if the adapter current limiting function is

not used.

Battery Charging-Related Pins

BOOST (Pin 1): This pin is used to bootstrap and supply

power for the topside power switch gate drive and control

circuity. In normal operation, VBOOST is powered from an

internally generated 8.6V regulator VGBIAS, VBOOST ≈ VCC

+ 8.9V when TGATE is high. Do not force an external

voltage on BOOST pin.

TGATE (Pin 2): This pin provides gate drive to the topside

power FET. When TGATE is driven on, the gate voltage will

be approximately equal to VSW + 6.6V. A series resistor of

5Ω to 10Ω should be used from this pin to the gate of the

topside FET.

SW (Pin 3): This pin is the reference point for the floating

topside gate drive circuitry. It is the common connection

for the top and bottom side switches and the output

inductor. This pin switches between ground and VCC with

very high dv/dt rates. Care needs to be taken in the PC

layout to keep this node from coupling to other sensitive

nodes. A 1A Schottky clamping diode should be placed

very close to the chip from the ground pin to this pin to

prevent the chip substrate diode from turning on. See

Applications Information for more details.

SYNC (Pin 4): External Clock Synchronization Input. Pulse

width range: 10% to 90%.

SDB (Shutdown Bar) (Pin 5): Active Low Digital Input. The

charger is disabled when asserted. This pin is connected

to the CHGEN pin to enable charger control through the

SMBus interface.

CHGEN (Pin 12): Digital Output to Enable Charger Func-

tion. Connect CHGEN to SDB.

ISET (Pin 17): Open-Drain CMOS Switch to DGND. An

external resistor, RSET, is connected from ISET to the

current programming input, the PROG pin of the battery

charger section, which sets the range of the charging

current.

ILIMIT (Pin 24): An external resistor is connected between

this pin and DGND. The value of the external resistor

programs the range and resolution of the programmed

charger current. See Electrical Characteristics table for

more information.

VLIMIT (Pin 25): An external resistor is connected between

this pin and DGND. The value of the external resistor

programs the range and resolution of the VSET divider. See

Electrical Characteristics table for more information.

VSET (Pin 26): This is the tap point of the programmable

resistor divider, which provides battery voltage feedback

to the charger.

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